β-Ga₂O₃ Lateral Schottky Barrier Diodes With > 10 kV Breakdown Voltage and Anode Engineering
Chenlu Wang, Qinglong Yan, Chaoqun Zhang, Chunxu Su, Kun Zhang, Sihan Sun, Zhihong Liu, Weihang Zhang, Sami Alghamdi, Emad Ghandourah, Chunfu Zhang, Jincheng Zhang, Hong Zhou, Yue Hao
Abstract
In this letter, we demonstrated <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 lateral Schottky barrier diodes (SBDs) with breakdown voltage (BV) over 10 kV via anode engineering techniques. Post-anode deposition annealing (PAA) was implemented to enhance the Schottky barrier height (SBH) to minimize the leakage current and suppress the interface state density ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{D}_{\text {it}}{)}$ </tex-math></inline-formula> by over 1 order of magnitude. It is found that the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{D}_{\text {it}}$ </tex-math></inline-formula> was extracted to be only <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${3}\times {10} ^{{10}}$ </tex-math></inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-{2}}$ </tex-math></inline-formula> eV <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-{1}}$ </tex-math></inline-formula> at the energy level near the conduction band after the PAA treatment. Benefiting from the PAA and the coupled as well as the carefully designed dual field-plate (FP) structure, the BV of the SBD was enhanced from about 4 kV to over 10 kV while the turn-on voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}_{\text {on}}{)}$ </tex-math></inline-formula> for those SBDs remained approximately at 1 V. These findings show the immense potential of anode engineered Ga2O3 diodes for future high-voltage and high-power electronic systems.