Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress
Tetsuo Narita, Masakazu Kanechika, Jun Kojima, H. Watanabe, Takeshi Kondo, Tsutomu Uesugi, S. Yamaguchi, Yasuji Kimoto, Kazuyoshi Tomita, Yoshitaka Nagasato, Satoshi Ikeda, Masayoshi Kosaki, Tohru OKA, Jun Suda
Abstract
Abstract Power devices are operated under harsh conditions, such as high currents and voltages, and so degradation of these devices is an important issue. Our group previously found significant increases in reverse leakage current after applying continuous forward current stress to GaN p–n junctions. In the present study, we identified the type of threading dislocations that provide pathways for this reverse leakage current. GaN p–n diodes were grown by metalorganic vapor phase epitaxy on freestanding GaN(0001) substrates with threading dislocation densities of approximately 3 × 10 5 cm −2 . These diodes exhibited a breakdown voltage on the order of 200 V and avalanche capability. The leakage current in some diodes in response to a reverse bias was found to rapidly increase with continuous forward current injection, and leakage sites were identified by optical emission microscopy. Closed-core threading screw dislocations (TSDs) were found at five emission spots based on cross-sectional transmission electron microscopy analyses using two-beam diffraction conditions. The Burgers vectors of these dislocations were identified as [0001] using large-angle convergent-beam electron diffraction. Thus, TSDs for which b = 1 c are believed to provide current leakage paths in response to forward current stress.