150 GHz High-Power Photodiode by Flip-Chip Bonding
Chao Wei, Xiaojun Xie, Ziyun Wang, Yake Chen, Zhongming Zeng, Xihua Zou, Wei Pan, Lianshan Yan
Abstract
We report high-power modified uni-traveling carrier photodiodes with 150-GHz bandwidth. To improve the RF output power, the photodiode chips are flip-chip bonded on diamond submounts with high thermal conductivity to enhance heat dissipation. Measured 3-dB bandwidths of 4-μm, 6-μm, 8-μm, and 10-μm diameter photodiodes reach 150 GHz, 129 GHz, 117 GHz, and 105 GHz, respectively. RF output power with 12.7 dBm at 90 GHz, 11.3 dBm at 100 GHz, 8.5 dBm at 110 GHz, −3 dBm at 150 GHz, and −5.7 dBm at 165 GHz are achieved.
Topics & Concepts
PhotodiodedBmMaterials scienceFlip chipOptoelectronicsRadio frequencyDissipationBandwidth (computing)ChipOpticsElectrical engineeringCMOSEngineeringPhysicsTelecommunicationsAmplifierComposite materialThermodynamicsAdhesiveLayer (electronics)Photonic and Optical DevicesAdvanced Photonic Communication SystemsAdvanced Fiber Laser Technologies