Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment
Jinying Yu, Xianglong Yang, Yan Peng, Xiaobo Hu, Xiwei Wang, Xiufang Chen, Xiangang Xu
Abstract
A novel microwave plasma etching technique was used to reveal various types of dislocation on the C-face of 4H-SiC.
Topics & Concepts
Etching (microfabrication)DislocationMicrowaveMaterials sciencePlasma etchingPlasmaFace (sociological concept)OptoelectronicsNanotechnologyComposite materialComputer sciencePhysicsTelecommunicationsSociologySocial scienceQuantum mechanicsLayer (electronics)Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesCopper Interconnects and Reliability