Dynamic switching between bound states in the continuum (BIC) and quasi-BIC based on a Dirac semimetal terahertz metasurface
Jingxiang Gao, Hang Liu, Man Zhang, Meng Liu, Huiyun Zhang, Yuping Zhang
Abstract
-factor with the asymmetry parameter was investigated, and the physical mechanism of quasi-BIC generation was determined by analyzing the surface electric field and surface current. Notably, the dynamic transition from BIC to quasi-BIC was achieved by varying the Fermi level of the Dirac semi-metal, with the maximum transmission difference of 0.61 and an almost constant resonant frequency for Fermi levels ranging from 2-20 meV. In addition, we fabricated and demonstrated a dynamic near-field display array, wherein different content is dynamically displayed by successively applying different gate voltages. This paper presents a novel design concept for dynamic switching between BIC and quasi-BIC on a metasurface and promotes the practical application of BIC metasurfaces.