A floating-gate field-effect transistor memory device based on organic crystals with a built-in tunneling dielectric by a one-step growth strategy
Zichen Chen, Shuai Chen, Shuai Chen, Tianhao Jiang, Shuang Chen, Shuang Chen, Ruofei Jia, Yanling Xiao, Jing Pan, Jiansheng Jie, Xiujuan Zhang
Abstract
could be achieved, showing the best performance ever reported for organic thin film-based FG-OFET memory devices. In addition, multi-level data storage (3 bits per cell) can be achieved by tuning the gate voltage magnitude. Our work not only provides a general strategy for the growth of high-quality organic crystals, but also paves the way towards high-performance flexible memory devices.
Topics & Concepts
Materials scienceGate dielectricDielectricQuantum tunnellingTransistorOptoelectronicsField-effect transistorLayer (electronics)SemiconductorNanotechnologyOrganic field-effect transistorCoatingOrganic semiconductorElectrical engineeringEngineeringVoltageAdvanced Memory and Neural ComputingOrganic Electronics and PhotovoltaicsSemiconductor materials and devices