Role of Interfacial Oxide in the Preferred Orientation of Ga<sub>2</sub>O<sub>3</sub> on Si for Deep Ultraviolet Photodetectors
Chao-Chun Yen, Tsun-Min Huang, Po‐Wei Chen, Kai-Ping Chang, Wan-Yu Wu, Dong‐Sing Wuu
Abstract
= 230 nm) at 5 V bias for a 200 nm thin film.
Topics & Concepts
Materials scienceAmorphous solidSputteringCrystallinitySiliconAnnealing (glass)OxideCrystallographyAnalytical Chemistry (journal)Thin filmOptoelectronicsNanotechnologyComposite materialChemistryMetallurgyChromatographyGa2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques