Low-Temperature Nitrogen Doping of Nanocrystalline Graphene Films with Tunable Pyridinic-N and Pyrrolic-N by Cold-Wall Plasma-Assisted Chemical Vapor Deposition
Nur Hamizah Zainal Ariffin, Muhammad Aniq Shazni Mohammad Haniff, Mohd Ismahadi Syono, Mohd Ambri Mohamed, Azrul Azlan Hamzah, Abdul Manaf Hashim
Abstract
/Ar ratio and plasma power. The possible growth mechanism of nanocrystalline graphene films is also discussed to understand the basic chemical reactions that occur at such low temperatures with the presence of plasma as well as the formation of pyridinic-N- and pyrrolic-N-dominated nanocrystalline graphene. The realization of nanocrystalline graphene films with enhanced N doping at 100 °C may open great potential in developing future transparent nanodevices.
Topics & Concepts
Nanocrystalline materialGrapheneMaterials scienceChemical vapor depositionChemical engineeringSubstrate (aquarium)DopingCrystalliteThin filmTungstenSheet resistanceNanotechnologyLayer (electronics)OptoelectronicsMetallurgyEngineeringOceanographyGeologyGraphene research and applicationsGraphene and Nanomaterials ApplicationsDiamond and Carbon-based Materials Research