Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
Chunyuan Wang, Chun‐Yi Chou, Han-Fang Shiue, Hsing-Yang Chen, Chen-Hsiang Ling, Jing‐Jong Shyue, Miin‐Jang Chen
Topics & Concepts
Work functionTinMaterials scienceAnnealing (glass)Atomic layer depositionMetal gateOptoelectronicsThin filmNanoscopic scaleMOSFETCrystallinityNanotechnologyLayer (electronics)Gate oxideTransistorMetallurgyElectrical engineeringComposite materialVoltageEngineeringSemiconductor materials and devicesFerroelectric and Negative Capacitance DevicesAdvancements in Semiconductor Devices and Circuit Design