Anisotropy and thermal properties in GeTe semiconductor by Raman analysis
Shuai Yang, Fengrui Sui, Yucheng Liu, Ruijuan Qi, Xiaoyu Feng, Shangwei Dong, Pingxiong Yang, Fangyu Yue
Abstract
can reveal a series of temperature-dependent phase transitions. These results provide a general approach for the investigation of the anisotropy of light-matter interactions in low-symmetric layered materials, benefiting the design and application of optoelectronic, anisotropic thermoelectric, and phase-transition memory devices based on bulk GeTe.
Topics & Concepts
AnisotropyRaman spectroscopyMaterials scienceSemiconductorCondensed matter physicsThermoelectric effectPhase transitionZigzagPolarization (electrochemistry)Crystal (programming language)OptoelectronicsOpticsChemistryPhysicsThermodynamicsMathematicsComputer scienceProgramming languageGeometryPhysical chemistryPhase-change materials and chalcogenidesChalcogenide Semiconductor Thin Films2D Materials and Applications