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A Self-Driven Bidirectional Photocurrent Photodetector for Optically Controlled Logic Gates Utilizes a GaN-Nanowall Network

Pargam Vashishtha, Shubhendra Kumar Jain, Pukhraj Prajapat, Ajay Kumar Verma, Neha Aggarwal, Billy J. Murdoch, Sumeet Walia, Govind Gupta

2024ACS Applied Optical Materials45 citationsDOI

Abstract

This Communication has reported a GaN-nanowall-network-based bidirectional photocurrent self-driven photodetector. The device leverages the unique properties of gallium nitride nanowall networks to modulate surface potentials, enabling bidirectional photocurrent generation and a self-driven nature. The detector enables a negative photocurrent under 266 nm illumination, while a positive photocurrent is obtained with a 355 nm source at 0 V applied bias. Peak responsivities of −2.5 and 1.7 A W –1 have been attained for the illumination wavelengths of 266 and 355 nm, respectively, under self-driven mode. Distinct logic states were realized by selectively illuminating the device with different wavelengths. The device operates as self-driven logic gates with output states defined relative to a fiducial zero point. The photocurrent direction and magnitude are also adjustable by varying the optical power intensity. Our findings demonstrate the potential of GaN-nanowall networks for realizing versatile, futuristic multifunction ultraviolet self-driven photonic devices.

Topics & Concepts

PhotocurrentPhotodetectorOptoelectronicsMaterials scienceElectronic engineeringEngineeringNanowire Synthesis and ApplicationsGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and Devices