High-quality heteroepitaxy of ε-Ga<sub>2</sub>O<sub>3</sub> films on 4H-SiC substrates grown <i>via</i> MOCVD
Shu-Jian Chen, Zimin Chen, Weiqu Chen, Paiwen Fang, Zesheng Lv, Bindi Cai, Congcong Che, Jun Liang, Xinzhong Wang, Gang Wang, Yanli Pei
Abstract
High-quality ε-Ga 2 O 3 epitaxial layers were grown on a 4H-SiC substrate via MOCVD. A (004) XRC FWHM of the ε-Ga 2 O 3 epitaxial layer as small as 0.09° (341 arcsec) is achieved.
Topics & Concepts
Metalorganic vapour phase epitaxyMaterials scienceQuality (philosophy)OptoelectronicsNanotechnologyEpitaxyLayer (electronics)PhysicsQuantum mechanicsGa2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques