Large-Scale and Ultraclean Dry Transfer of Two-Dimensional Materials via Liquid Nitrogen-Assisted Cryogenic Exfoliation
Xiaoxiao Zheng, Lei Han, Sabeen Fatima, Safia Khan, Yu Sun, Ziheng Li, Yafei Ning, Klaus Leifer, Gengchang Zhu, Hu Li, Aimin Song
Abstract
Transition metal dichalcogenides (TMDCs) hold significant promise in constructing next-generation high-performance electronic devices, potentially extending Moore’s law and enabling the realization of three-dimensional integrated circuit architectures. However, realizing this potential depends critically on developing a reliable method to transfer TMDCs from a growth substrate to desirable surfaces. Here, we report a dry-transfer strategy of liquid nitrogen-assisted cryogenic exfoliation to achieve large-scale and superclean transfer of TMDCs. Benefited from the synergistic effect of liquid nitrogen-induced exfoliation and protection of hafnium oxide, the transferred TMDCs are free from polymer residues and show excellent electrical property, and taking n-type single-crystal molybdenum disulfide as a demonstration, the transferred TMDC exhibits high carrier mobility up to 38.4 cm 2 V –1 s –1 . Moreover, this transfer method shows versatile capabilities in transferring monolayer and multilayer TMDCs and constructing bi- and trilayer heterostructures. Therefore, our proposed transfer methodology promises the integration of TMDCs into future, ultimately scaled-down, electronic device technologies.