Multifunctional Lateral Transition‐Metal Disulfides Heterojunctions
Yipeng An, Yusheng Hou, Kun Wang, Shijing Gong, Chunlan Ma, Chuanxi Zhao, Tianxing Wang, Zhaoyong Jiao, Heyan Wang, Ruqian Wu
Abstract
Abstract The intrinsic spin‐dependent transport properties of two types of lateral VS 2 |MoS 2 heterojunctions are systematically investigated using first‐principles calculations, and their various nanodevices with novel properties are designed. The lateral VS 2 |MoS 2 heterojunction diodes show a perfect rectifying effect and are promising for the applications of Schottky diodes. A large spin‐polarization ratio is observed for the A‐type device and pure spin‐mediated current is then realized. The gate voltage significantly tunes the current and rectification ratio of their field‐effect transistors. In addition, they all demonstrate a sensitive photoresponse to blue light, and could be used as photodetector and photovoltaic device. Moreover, they generate an effective thermally driven current when a temperature gratitude appears between the two terminals, suggesting them as potential thermoelectric materials. Hence, the lateral VS 2 |MoS 2 heterojunctions show a multifunctional nature and have various potential applications in spintronics, optoelectronics, and spin caloritronics.