SiO<sub>2</sub> thin film growth through a pure atomic layer deposition technique at room temperature
Didier Arl, Vincent Rogé, Noureddine Adjeroud, Bianca Rita Pistillo, M. Sarr, Naoufal Bahlawane, D. Lenoble
Abstract
O. This pure ALD approach generated porous oxide layers with very low chloride contamination in films. This optimized RT-ALD process could be applied to a wide range of substrates that need to be 3D-coated, similar to mesoporous structured membranes.
Topics & Concepts
Atomic layer depositionMaterials scienceMesoporous materialChemical engineeringLayer (electronics)CatalysisDeposition (geology)PorosityAtomic layer epitaxyChlorideAmmoniaThin filmContaminationNanotechnologyInorganic chemistryChemistryMetallurgyComposite materialOrganic chemistrySedimentBiologyPaleontologyEngineeringEcologySemiconductor materials and devicesElectronic and Structural Properties of OxidesCatalytic Processes in Materials Science