III-V/III-N technologies for next generation high-capacity wireless communication
Nadine Collaert, A. Alian, A. Banerjee, G. Boccardi, Pieter Cardinael, V. Chauhan, Claude Desset, R. ElKashlan, Ahmad Khaled, Mark Ingels, B. Kunert, Y. Mols, Barry O’Sullivan, Uthayasankaran Peralagu, Nélson Pinho, R. Rodríguez, A. Sibaja-Hernandez, Siddhartha Sinha, Xin Sun, Abhitosh Vais, Bjorn Vermeersch, S. Yadav, D. Yan, Hao Yu, Y. Zhang, Manhong Zhao, Joris Van Driessche, G. Gramegna, P. Wambacq, Bertrand Parvais, Michaël Peeters
Abstract
In this paper, we will discuss the progress that has been made in upscaling GaN and InP to a Si platform as well as making them CMOS and 3D compatible to enable the heterogeneous systems that will be needed for 5G mm-wave and 6G sub-THz frequencies for high-capacity wireless communication.
Topics & Concepts
WirelessComputer scienceCMOSTerahertz radiationTelecommunicationsElectrical engineeringElectronic engineeringOptoelectronicsMaterials scienceEngineeringRadio Frequency Integrated Circuit DesignSemiconductor Lasers and Optical DevicesSemiconductor materials and devices