Protecting hot carriers by tuning hybrid perovskite structures with alkali cations
Ti Wang, Linrui Jin, Juanita Hidalgo, Weibin Chu, Jordan Snaider, Shibin Deng, Tong Zhu, Barry Lai, Oleg V. Prezhdo, Juan‐Pablo Correa‐Baena, Libai Huang
Abstract
with an excitation 1.45 eV above the bandgap. In the doped thin films, the protected hot carriers migrate 100 s of nanometers longer than the undoped sample as imaged by ultrafast microscopy. We attributed these improvements to the relaxation of lattice strain and passivation of halide vacancies by alkali cations based on x-ray structural characterizations and first principles calculations.
Topics & Concepts
HalideAlkali metalPassivationMaterials scienceCharge carrierDopingBand gapPerovskite (structure)Carrier lifetimeNanocrystalline materialCharge-carrier densityRelaxation (psychology)OptoelectronicsChemical physicsNanotechnologyInorganic chemistryChemistryLayer (electronics)SiliconCrystallographySocial psychologyPsychologyOrganic chemistryPerovskite Materials and ApplicationsChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And Properties