An Al-doped TiO<sub>2</sub> interfacial layer for effective hole injection characteristics of quantum-dot light-emitting diodes
Min Gye Kim, Jae Seung Shin, Jin Hyun, Jun Hyung Jeong, Dong Hee Han, Beom‐Su Kim, Woojin Jeon, Yongsup Park, Seong Jun Kang
Abstract
Al-doped TiO 2 (ATO) interfacial layer improves the charge balance and the performance of quantum-dot light-emitting diodes (QLEDs).
Topics & Concepts
Materials scienceQuantum dotOptoelectronicsDiodeDopingLight-emitting diodeLayer (electronics)Charge (physics)NanotechnologyPhysicsQuantum mechanicsQuantum Dots Synthesis And PropertiesOrganic Light-Emitting Diodes ResearchChalcogenide Semiconductor Thin Films