Anisotropic complex refractive index of β-Ga2O3 bulk and epilayer evaluated by terahertz time-domain spectroscopy
Verdad C. Agulto, Kazuhiro Toya, Thanh Nhat Khoa Phan, Valynn Katrine Mag-usara, Jiajun Li, Melvin John F. Empizo, T. Iwamoto, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Nobuhiko Sarukura, Masashi Yoshimura, Makoto Nakajima
Abstract
Homoepitaxial film and semi-insulating bulk β-Ga2O3 with (001) orientation were studied using terahertz time-domain spectroscopy (THz-TDS) in the frequency region from 0.2 to 3.0 THz parallel to the [100] and [010] directions. The static permittivity of the bulk was determined to be 10.0 and 10.4 along the a-axis and b-axis, respectively, and the refractive index values at 0.2 THz are 3.17 and 3.23 for each axis. The electrical resistivity of the epilayer was extracted with good accuracy by employing the Drude–Lorentz model and without the use of electrical contacts. This noninvasive and contact-free material evaluation through THz-TDS proves to be a powerful tool for probing and obtaining various types of information about β-Ga2O3 materials such as bulk and thin films for the development of β-Ga2O3-based device applications.