Application of a distinctly bent, trinuclear, end-to-end azide bridged, mixed valence cobalt(<scp>iii</scp>/<scp>ii</scp>/<scp>iii</scp>) complex in the fabrication of photosensitive Schottky barrier diodes
Sudip Bhunia, Mainak Das, Snehasis Banerjee, Michael G. B. Drew, Partha Pratim Ray, Shouvik Chattopadhyay
Abstract
The cobalt(iii)-cobalt(ii)-cobalt(iii) skeleton in the complex is non-linear and non-centrosymmetric. The redox behavior of the complex was studied by using Cyclic Voltammetry (CV). The complex is found to be a semiconductor material as confirmed by determining the band gap of this complex by experimental as well as theoretical studies. The band gap in the solid state has been determined experimentally. The conductivity of the synthesized complex based device improves considerably in illumination conditions from the non-illuminated conditions. The complex has also been used to fabricate Schottky barrier diodes.
Topics & Concepts
ChemistryCobaltSchottky diodeValence (chemistry)FabricationSchottky barrierCrystallographyDiodeMaterials scienceOptoelectronicsInorganic chemistryOrganic chemistryAlternative medicineMedicinePathologyMolecular Junctions and NanostructuresSemiconductor materials and interfacesSemiconductor materials and devices