A new model for thermally induced redistributions of free carriers in centrosymmetric flexoelectric semiconductor beams
Yilin Qu, Gongye Zhang, X.-L. Gao, Feng Jin
Topics & Concepts
Free carrierSemiconductorMaterials scienceFlexoelectricityBoundary value problemMechanicsTransverse planePerturbation (astronomy)Beam (structure)Elasticity (physics)Charge carrierTimoshenko beam theoryAmplitudeClassical mechanicsCondensed matter physicsPhysicsOpticsQuantum mechanicsStructural engineeringLiquid crystalEngineeringOptoelectronicsComposite materialNonlocal and gradient elasticity in micro/nano structuresThermoelastic and Magnetoelastic PhenomenaNumerical methods in engineering