Electric-field control of nonvolatile resistance state of perpendicular magnetic tunnel junction via magnetoelectric coupling
Yike Zhang, Weideng Sun, Kaihua Cao, Xiao‐Xue Yang, Yongqiang Yang, Shiyang Lu, Ao Du, Chaoqun Hu, Ce Feng, Yutong Wang, Jianwang Cai, Baoshan Cui, Hong‐Guang Piao, Weisheng Zhao, Yonggang Zhao
Abstract
Magnetic tunnel junctions (MTJs) are the core elements of spintronic devices. Now, the mainstream writing operation of MTJs mainly relies on electric current with high energy dissipation, which can be greatly reduced if an electric field is used instead. In this regard, strain-mediated multiferroic heterostructure composed of MTJ and ferroelectrics are promising with the advantages of room temperature and magnetic field-free as already demonstrated by MTJ with in-plane magnetic anisotropy. However, there is no such report on the perpendicular MTJs (p-MTJs), which have been commercialized. Here, we investigate electric-field control of resistance state of MgO-based p-MTJs in multiferroic heterostructures. A remarkable and nonvolatile manipulation of resistance is demonstrated at room temperature without magnetic field assistance. Through various characterizations and micromagnetic simulation, the manipulation mechanism is uncovered. Our work provides an effective avenue for manipulating p-MTJ resistance by electric fields and is notable for high density and ultralow power spintronic devices.