Grain boundary control for high-reliability HfO2-based RRAM
Dong Geun Jeong, Eunpyo Park, Yooyeon Jo, Eunyeong Yang, Gichang Noh, Dae Kyu Lee, Min Jee Kim, YeonJoo Jeong, Hyun Jae Jang, Daniel J. Joe, Jiwon Chang, Joon Young Kwak
Topics & Concepts
Resistive random-access memoryReliability (semiconductor)Materials scienceGrain boundaryControl (management)Engineering physicsComputer scienceElectrical engineeringComposite materialEngineeringPhysicsArtificial intelligenceThermodynamicsMicrostructurePower (physics)VoltageAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices