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Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications

Vishnu Aggarwal, C. Ramesh, Prashant Tyagi, Sudhanshu Gautam, Apoorva Sharma, Sudhir Husale, Manoj Kumar, Sunil Singh Kushvaha

2020Materials Science in Semiconductor Processing25 citationsDOI

Topics & Concepts

Materials scienceResponsivitySapphireMolecular beam epitaxyOptoelectronicsEpitaxyWurtzite crystal structureRaman spectroscopyLayer (electronics)PhotodetectorOpticsLaserNanotechnologyMetallurgyPhysicsZincGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties
Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications | Litcius