Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era
Jiayi Li, Haider Abbas, D. S. Ang, Asif Ali, Xin Ju
Abstract
, valence changing, electrochemical metallization, phase changing, interfaced-controlling, charge-trapping, ferroelectric tunnelling, and spin-transfer torquing. Next, we propose a universal benchmark for the artificial synapse and neuron devices on spiking energy consumption, standby power consumption, and spike timing. Based on the benchmark, we address the challenges, suggest the guidelines for intra-device and inter-device design, and provide an outlook for the neuromorphic applications of resistive switching-based artificial neuron and synapse devices.
Topics & Concepts
Neuromorphic engineeringComputer scienceMemristorVon Neumann architectureSynapseResistive random-access memoryElectronicsComputer architectureArtificial neural networkArtificial intelligenceElectrical engineeringNeuroscienceVoltageEngineeringBiologyOperating systemAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesPhotoreceptor and optogenetics research