First direct observation of the built-in electric field and oxygen vacancy migration in ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> film during electrical cycling
Liang Chen, Zhongxin Liang, Shixuan Shao, Qianqian Huang, Kechao Tang, Ru Huang
Abstract
By combining differential phase contrast scanning transmission electron microscope (DPC-STEM) and Energy Disperse Spectroscopy (EDS) analysis, the migration of oxygen vacancies and the evolution of the built-in field in ferroelectric HfO 2 are observed for the first time.
Topics & Concepts
FerroelectricityMaterials scienceElectric fieldCondensed matter physicsVacancy defectOxygenOxideNanotechnologyChemical physicsOptoelectronicsChemistryPhysicsDielectricMetallurgyQuantum mechanicsOrganic chemistryFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase Materials