Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention
Yuting Zhang, Swapnadeep Poddar, He Huang, Leilei Gu, Qianpeng Zhang, Yu Zhou, Shuai Yan, Sifan Zhang, Zhitang Song, Baoling Huang, Guozhen Shen, Zhiyong Fan
Abstract
Stable high-density perovskite nanowire array Re-RAMs report unprecedented long retention time and fast switching speed.
Topics & Concepts
Materials scienceRetention timeSwitching timeOptoelectronicsNanowireNon-volatile memoryCrystalliteNanotechnologyResistive touchscreenPerovskite (structure)HalideData retentionElectrical engineeringChemistryCrystallographyInorganic chemistryEngineeringMetallurgyChromatographyPerovskite Materials and ApplicationsAdvanced Memory and Neural ComputingConducting polymers and applications