Analysis of low-threshold optically pumped III-nitride microdisk lasers
Farsane Tabataba-Vakili, Christelle Brimont, Blandine Alloing, Benjamin Damilano, Laetitia Doyennette, Thierry Guillet, Moustafa El Kurdi, Sébastien Chenot, Virginie Brändli, Eric Frayssinet, Jean-Yves Duboz, Fabrice Semond, Bruno Gayral, Philippe Boucaud
Abstract
Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm2 have been achieved along with narrow linewidths of 0.07 nm and a large peak-to-background dynamic of 300. We compare this threshold range with the one that can be calculated using a rate equation model. We show that thresholds in the few kW/cm2 range constitute the best that can be achieved with III-nitride quantum wells at room temperature. The sensitivity of lasing on the fabrication process is also discussed.