Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
K. Niskanen, Antoine Touboul, Rosine Coq Germanicus, A. Michez, Arto Javanainen, F. Wrobel, J. Boch, V. Pouget, Frédéric Saigné
Abstract
The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
Topics & Concepts
Silicon carbideMaterials scienceIrradiationStress (linguistics)MOSFETReliability (semiconductor)OptoelectronicsNeutronPower MOSFETNuclear engineeringSiliconPower semiconductor deviceWide-bandgap semiconductorVoltageElectrical engineeringPower (physics)TransistorNuclear physicsComposite materialEngineeringPhysicsLinguisticsPhilosophyQuantum mechanicsRadiation Effects in ElectronicsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design