Litcius/Paper detail

Roles of temperature, materials, and domain inversion in high-performance, low-bias-drift thin film lithium niobate blue light modulators

Oguz Tolga Celik, Nancy Yousry Ammar, Tae‐Won Park, Hubert S. Stokowski, Kevin Multani, Alexander Y. Hwang, Samuel Gyger, Yudan Guo, M. M. Fejer, Amir H. Safavi‐Naeini

2024Optics Express16 citationsDOIOpen Access PDF

Abstract

We demonstrate a thin film lithium niobate electro-optic modulator operating at 456 nm with an RF voltage-length product of 0.38 V-cm and a bandwidth of 6.9 GHz. We test the dielectric relaxation of the modulator with sweeps of temperature and optical input power, and compare equivalent modulators with electrode materials of Cr-Au, Ti-Au and Al in terms of bias stability and current-voltage characteristics. We demonstrate bias stability over at least 8 hours with Al devices, and show relationships between drift, I-V characteristics and ferroelectric domain switching.

Topics & Concepts

Lithium niobateMaterials scienceThin filmBiasingOptoelectronicsFerroelectricityOpticsVoltageElectrodeDielectricElectrical engineeringNanotechnologyChemistryEngineeringPhysicsPhysical chemistryPhotorefractive and Nonlinear OpticsPhotonic and Optical DevicesSolid State Laser Technologies
Roles of temperature, materials, and domain inversion in high-performance, low-bias-drift thin film lithium niobate blue light modulators | Litcius