New directions in the analysis of buried interfaces for device technology by hard X-ray photoemission
O. Renault, Pierre-Marie Deleuze, Jules Courtin, T.R. Bure, Nicolas Gauthier, Emmanuel Nolot, C. Robert‐Goumet, Nicolas Pauly, E. Martínez, Kateryna Artyushkova
Abstract
In this review, the status of hard X-ray photoelectron spectroscopy (HAXPES) implemented with chromium Kα excitation (5.414 keV) and applied to technological research in nanoelectronics is presented.
Topics & Concepts
X-ray photoelectron spectroscopyNanoelectronicsX-rayPhotoemission spectroscopyExcitationMaterials scienceAngle-resolved photoemission spectroscopyChromiumEngineering physicsNanotechnologyPhysicsElectronic structureEngineeringOpticsElectrical engineeringMetallurgyCondensed matter physicsNuclear magnetic resonanceElectron and X-Ray Spectroscopy TechniquesSemiconductor materials and devicesElectronic and Structural Properties of Oxides