Significant improvement of ferroelectricity and reliability in Hf0.5Zr0.5O2 films by inserting an ultrathin Al2O3 buffer layer
Haiyan Chen, Lin Tang, Leyang Liu, Yonghong Chen, Hang Luo, Xi Yuan, Dou Zhang
Topics & Concepts
FerroelectricityMaterials scienceDielectricPolarization (electrochemistry)OptoelectronicsCapacitorAtomic layer depositionElectrodeLayer (electronics)Thin filmNanotechnologyVoltageElectrical engineeringChemistryEngineeringPhysical chemistryFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase Materials