Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In<sub>2</sub>O<sub>3</sub> Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance > 10<sup>9</sup> Cycles without V<sub>T</sub> Drift Penalty
Zehao Lin, Mengwei Si, Peide D. Ye
Abstract
In this work, we report the ultra-fast operation of back-end-of-line (BEOL) compatible Fe-FETs with atomic layer deposition (ALD) In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> and HfZrO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (HZO) as channel semiconductor and ferroelectric gate insulator with channel length (L <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ch</inf> ) scaled down to 7 nm, enabled by ultra-fast I-V (UFIV) and pulse I-V measurements. It is found that device memory characteristics benefit from fast operation down to 10 ns level, by a suppression of trapping effect while maintaining fast FE switching speed. High memory performance is achieved, exhibiting a wide memory window of 2.5 V and a high endurance exceeding 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> cycles without V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> drift penalty. These results suggest that oxide semiconductor Fe-FETs are promising toward monolithic 3D integration for in-memory computing at ultra-fast operation speed.