Quantum dot-based non-volatile memory: a comprehensive outlook
Abu Taher, M. Atikur Rahman, Rana Mia, Nasir Uddin, Mustavi Islam, M. N. I. Khan, Md. Khurshed Alam, Mohammad A. Alim
Abstract
With the rise of digital technology, the use of memory devices is swiftly expanding, and this trend is expected to continue in the forthcoming years. Accordingly, researchers are exploring materials that surpass the performance of those used in traditional memory devices, and notably, there is a considerable interest in quantum dots (QDs). This is primarily due to the fact that quantum dots possess exceptional optical and electric properties. As a result, they have become appealing materials to enhance the performance of non-volatile memory devices. In this review, we outlined the various approaches employed for the synthesis of quantum dots as well as different types of quantum dots used for prototyping different non-volatile memory technologies and their current perspective. Additionally, we compared various key parameters, such as the ON/OFF ratio, retention time, memory window, charge trapping capacity, and multiple voltage levels, of these QD-based memories together with future outlook.