Sol-gel based zirconium dioxide dielectrics by oxygen-annealing at low temperature for highly stable and robust flexible resistive random access memory
Sang-Joon Park, Byoung‐Soo Yu, Jun-Young Jeon, Byoung-Cheol Kang, Tae‐Jun Ha
Topics & Concepts
Resistive random-access memoryMaterials scienceAnnealing (glass)DielectricOxideOxygenPassivationZirconiumOptoelectronicsArrhenius equationNanotechnologyActivation energyElectrodeComposite materialChemistryMetallurgyPhysical chemistryLayer (electronics)Organic chemistryAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsSemiconductor materials and devices