Growth characteristics and properties of Ga<sub>2</sub>O<sub>3</sub> films fabricated by atomic layer deposition technique
Xiangtai Liu, Shaoqing Wang, Lang He, Yifan Jia, Lu Qin, Haifeng Chen, Fei Ma, Yue Hao
Abstract
The review summarizes the precursors, characterization techniques, factors moderating film growth, and the properties such as crystal structure, chemical composition, surface morphology, and optical properties of Ga 2 O 3 films fabricated by ALD.
Topics & Concepts
Materials scienceAtomic layer depositionCharacterization (materials science)Layer (electronics)Deposition (geology)Chemical engineeringMorphology (biology)Crystal structureCrystal growthNanotechnologyOptoelectronicsCrystallographyPaleontologyEngineeringBiologySedimentGeneticsChemistryGa2O3 and related materialsZnO doping and propertiesElectronic and Structural Properties of Oxides