Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone
I. V. Binola K Jebalin, S. Angen Franklin, G. Gifta, P. Prajoon, D. Nirmal
Topics & Concepts
Materials scienceHigh-electron-mobility transistorOptoelectronicsGallium nitrideBreakdown voltageBarrier layerDopingElectric fieldWide-bandgap semiconductorSubstrate (aquarium)NitrideVoltageLayer (electronics)TransistorEngineering physicsElectrical engineeringNanotechnologyEngineeringQuantum mechanicsGeologyPhysicsOceanographyGaN-based semiconductor devices and materialsSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies