Giant switchable ferroelectric photovoltage in double-perovskite epitaxial films through chemical negative strain
Jie Tu, Hangren Li, Xudong Liu, Guoqiang Xi, X. G. Liu, Mengqi Zhang, Rong Wu, Siyuan Du, Dong-Fei Lu, Longyuan Shi, Jing Xia, Yue‐Wen Fang, Jiaqi Ding, Yuzhuo Liu, Yueyang Jia, Meng Yuan, Rui Yang, Xiaolong Li, Xiangmin Meng, Jianjun Tian, Linxing Zhang, Xianran Xing
Abstract
Double-perovskite films have been extensively studied in multifunctional fields due to their modifiability. Here, a controlled process strategy to induce chemical strain and anomalous Poisson deformation is proposed for perovskite-based films. The chemical negative strain in the local-ordering BiSmFe 2 O 6 double-perovskite films can be regulated by oxygen engineering to cause the effectively tunable bandgap. We markedly increased the switchable open-circuit voltage to ~1.56 V from ~0.50 V for Pt/BiSmFe 2 O 6 /Nb-SrTiO 3 devices, which is the highest in single-layer perovskite-based ferroelectric photovoltaic perpendicular devices under white light-emitting diode irradiation. The multifield composite action mechanism reveals the electrical cause of the large open-circuit voltage. The synergy of the optical fields and ferroelectric fields provides the possibility of multilevel storage. Structural characterizations indicate that the chemical strain offers a dual role of lattice distortion and vacancy migration. The strategy of controllable chemical strain facilitates further exploration of the application potential of ferroelectric materials for multifunctional electronic devices.