Robust Radical Cations of Hexabenzoperylene Exhibiting High Conductivity and Enabling an Organic Nonvolatile Optoelectronic Memory
Yujing Wang, Qi Gong, Sai Ho Pun, Hung Kay Lee, Yaoqiang Zhou, Jianbin Xu, Qian Miao
Abstract
Herein, we report robust π-conjugated radical cations resulting from the oxidation of hexabenzoperylene (HBP) derivatives, HBP-B and HBP-H, which have butyl and hexyl groups, respectively, attached to the same twisted double helicene π-backbone. The radical cation of HBP-B was successfully crystallized in the form of hexafluorophosphate, which exhibited conductivity as high as 1.32 ± 0.04 S cm–1. Photochemical oxidation of HBP-H by molecular oxygen led to the formation of its radical cation in the solid state, as found with different techniques. This allowed the organic field effect transistor of HBP-H to function as a nonvolatile optoelectronic memory, with the memory switching contrast above 103 and long-term stability without using a floating gate, an electret layer, or photochromic molecules.