High breakdown electric field (>5 MV/cm) in UWBG AlGaN transistors
Seungheon Shin, Hridibrata Pal, Jon Pratt, John Niroula, Yinxuan Zhu, Chandan Joishi, Brianna Klein, Andrew Armstrong, Andrew A. Allerman, Tomás Palacios, Siddharth Rajan
Abstract
We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal–insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with one of the highest average breakdown fields of 5.3 MV/cm (a breakdown voltage of >260 V) with an associated maximum current density of 342 mA/mm and a cutoff frequency of 9.1 GHz. The reported results provide the potential of UWBG AlGaN HEFTs for the next generation of high-power radio frequency applications.