Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment
Dun‐Bao Ruan, Kuei‐Shu Chang‐Liao, Chih‐Wei Liu, Yao‐Jen Lee, Yu-Hsuan Chien, Bo-Lien Kuo, Yu‐Chuan Chiu, Kai‐Jhih Gan, Chih-Chieh Hsu, Po‐Tsun Liu
Abstract
Performance improvement on Ge nFinFET, pFinFET and CMOS inverter can be achieved by using a novel low temperature damage-free supercritical phase fluid (SCF) treatment. Thanks to effective reduction of unstable oxidation states, oxygen vacancies and interface traps, higher on-off current ratios ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${8}\times {10}^{{5}}$ </tex-math></inline-formula> for pFinFET and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${3.3}\times {10}^{{5}}$ </tex-math></inline-formula> for nFinFET), lower S.S. (72 mV/dec), higher on current (>45% improvement) and better reliability in Ge FinFETs are achieved with a SCF treatment as compared with a remote plasma post-oxidation (PPO) one. Besides, a higher voltage gain (88 V/V) of Ge FinFET CMOS inverter is obtained with a SCF treatment in comparison with a remote PPO one.