Halogen doping of p-type inorganic hole transport layer: electronic nature-based dopant engineering for modulating hole selectivity in inverted planar perovskite solar cells
Vidya Sudhakaran Menon, Saraswathi Ganesan, Rohith Kumar Raman, Ananthan Alagumalai, Ananthanarayanan Krishnamoorthy
Abstract
The role of metal cation and halide anion dopants in regulating the properties of NiO x hole transport layer (HTL) was explored. This study confirms that halide dopants also increase the Ni 3+ defect density and work function of p-type inorganic HTL.
Topics & Concepts
DopantHalideDopingPerovskite (structure)Materials scienceNon-blocking I/OPlanarLayer (electronics)SelectivityWork functionInorganic chemistryHalogenMetalSemiconductorOptoelectronicsChemistryNanotechnologyCrystallographyMetallurgyCatalysisOrganic chemistryComputer scienceComputer graphics (images)AlkylPerovskite Materials and ApplicationsChalcogenide Semiconductor Thin FilmsConducting polymers and applications