Selectivity Enhancement for Ruthenium Atomic Layer Deposition in Sub‐50 nm Nanopatterns by Diffusion and Size‐Dependent Reactivity
Jan‐Willem J. Clerix, Esteban A. Marques, Job Soethoudt, Fabio Grillo, Geoffrey Pourtois, J. Ruud van Ommen, Annelies Delabie
Abstract
Abstract Area‐selective deposition (ASD) is a promising bottom‐up approach for fabricating nanoelectronic devices. However, a challenge is to prevent the undesired growth of nanoparticles in the nongrowth area. This work uses kinetic Monte Carlo (KMC) methods to investigate the defectivity in ruthenium ASD by (ethylbenzyl)(1‐ethyl‐1,4‐cyclohexadienyl)Ru/O 2 (EBECHRu) atomic layer deposition (ALD) in line‐space nanopatterns with different dimensions. Ru ASD is governed by adsorption as well as diffusion. The defectivity depends on the pattern dimensions, as nanoparticles can diffuse and reach the interface with the growth area where they aggregate. For linewidths of 50 nm and smaller, all Ru adspecies are captured at the growth interface before growth by precursor adsorption is catalyzed. The synergetic effect of diffusion and size‐dependent reactivity reduces defectivity below 10 10 Ru atoms cm −2 for at least 1000 ALD cycles. This is more than 1000 times lower than for patterns with a linewidth of 200 nm and larger, where the Ru content decreases significantly only near the interface with the growth surface. The predicted depletion zone is confirmed by experiments in nanoscale line‐space patterns. Overall, this mechanism results in smaller and fewer Ru nanoparticles for smaller patterns, facilitating the development of passivation‐deposition‐etch ASD processes for nanoelectronic device fabrication.