Improved Drain Current Characteristics of HfO2/SiO2 Dual Material Dual Gate Extension on Drain Side-TFET
B. Balaji, K. Srinivasa Rao, K. Girija Sravani, B. Kalivaraprasad, N. V. Bindu Madhav, K. Chandrahas, B.R.B Jaswanth
Topics & Concepts
Materials scienceOptoelectronicsSilicon carbideSiliconDielectricSubstrate (aquarium)Gate oxideTransistorGate dielectricSilicon nitrideQuantum tunnellingHigh-κ dielectricMOSFETNitrideVoltageNanotechnologyElectrical engineeringLayer (electronics)Composite materialGeologyOceanographyEngineeringAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesIntegrated Circuits and Semiconductor Failure Analysis