Ferroelectric control of the perpendicular magnetic anisotropy in PtCoRu/Hf0.5Zr0.5O2 heterostructure
Bao Zhang, Chunlong Li, Peizhen Hong, Zongliang Huo
Abstract
The magneto-electric coupling (MEC) effect has been considered an effective method for the voltages controlled magnetic anisotropy in traditional ferroelectric/ferromagnetic structures. Unlike traditional perovskite ferroelectrics, the ferroelectric hafnium-based oxides hold great potential for use in the complementary metal oxide semiconductors (CMOS) circuit with the advantages of CMOS compatibility and easy scaled-down and lower leakage current. In this article, the MEC effects in the PtCoRu/Hf0.5Zr0.5O2 (HZO) heterostructure have been investigated using the polar magneto-optical Kerr effect microscopy and anomalous Hall effect. The major modification of perpendicular magnetic anisotropy of the PtCoRu thin film was controlled obviously within the ±4 V polarized voltages of the Hf0.5Zr0.5O2 (HZO) film, accompanying with the coercivity field and remnant magnetization significantly decreased. The Hall voltages of PtCoRu in Hall bar devices were also controlled effectively under ±3 V polarized voltages. Such a finding proposes a more optimized method for the magnetic logic gates and memories based on voltage-controlled magnetic anisotropy in future.