InGaN-based red LEDs with 682 nm emission and 9.2 % EQE enabled by a stress-relief template

Kun Xing, Hong Zeng, Zhengang Ru, Yun Zhang, Zhengxian Jin, Zhengwei Pan, Xiaolong Jiang, Haifeng Wang, Junhan Cai, Liangyao Lin

2025Journal of Alloys and Compounds7 citationsDOI

Topics & Concepts

Light-emitting diodeOptoelectronicsMaterials scienceQuantum efficiencyRed shiftPhysicsGalaxyQuantum mechanicsGaN-based semiconductor devices and materialsZnO doping and propertiesGa2O3 and related materials

InGaN-based red LEDs with 682 nm emission and 9.2 % EQE enabled by a stress-relief template

Topics & Concepts

InGaN-based red LEDs with 682 nm emission and 9.2 % EQE enabled by a stress-relief template