Interface-engineered electron and hole tunneling
Rui Guo, Lingling Tao, Ming Li, Zhongran Liu, Weinan Lin, Guowei Zhou, Xiaoxin Chen, Liang Liu, Xiaobing Yan, He Tian, Evgeny Y. Tsymbal, Jingsheng Chen
Abstract
ferroelectric tunnel junctions by reversal of tunneling electroresistance. Our electrical measurements, electron microscopy and spectroscopy characterization, and theoretical modeling unambiguously point out to electron or hole tunneling regimes depending on interface termination. The interface control of the tunneling regime offers designed functionalities of electronic devices.
Topics & Concepts
Quantum tunnellingInterface (matter)ElectronMaterials scienceFerroelectricityCondensed matter physicsOptoelectronicsNanotechnologyPhysicsQuantum mechanicsComposite materialCapillary numberDielectricCapillary actionElectronic and Structural Properties of OxidesFerroelectric and Piezoelectric MaterialsFerroelectric and Negative Capacitance Devices