Surface and volume energies of α-, β-, and κ-Ga<sub>2</sub>O<sub>3</sub> under epitaxial strain induced by a sapphire substrate
Ilaria Bertoni, Aldo Ugolotti, Emilio Scalise, Leo Miglio
Abstract
A spontaneous (001) surface reconstruction of κ-Ga 2 O 3 is found under a misfit strain induced by the interface with sapphire. Even in the strain-free case, it has still the lowest surface energy and is comparable to the best β-(−201) surface.
Topics & Concepts
Materials scienceEpitaxySapphireStrain (injury)Substrate (aquarium)Volume (thermodynamics)Surface (topology)CrystallographyComposite materialThermodynamicsOpticsLayer (electronics)GeometryLaserChemistryGeologyMathematicsMedicineInternal medicinePhysicsOceanographyGa2O3 and related materialsAdvanced Photocatalysis TechniquesElectronic and Structural Properties of Oxides