Role of IGZO thickness for oxygen reservoir control in stacked IGZO/ZrOx layers: Towards reliable, uniform performance of flexible random-access memories
Ajit Kumar, Krishnaiah Mokurala, Dhananjay Mishra, Hyeon‐Bin Jo, Sung Hun Jin
Topics & Concepts
Materials scienceX-ray photoelectron spectroscopyAmorphous solidResistive random-access memoryBilayerOxygenOptoelectronicsNanotechnologyElectrodeChemical engineeringCrystallographyChemistryEngineeringOrganic chemistryBiochemistryMembranePhysical chemistryAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsFerroelectric and Negative Capacitance Devices