Exploring the direction-dependency of conductive filament formation and oxygen vacancy migration behaviors in HfO<sub>2</sub>-based RRAM
Donglan Zhang, Jiong Wang, Qing Wu, Yong Du
Abstract
Oxygen vacancy (V O ) defects play an essential role in governing the conductivity of semiconductor materials.
Topics & Concepts
Resistive random-access memoryOxygenVacancy defectAnnealing (glass)ConductivityCondensed matter physicsElectrical conductorMaterials scienceValence (chemistry)ChemistryChemical physicsNanotechnologyCrystallographyElectrodeComposite materialPhysical chemistryPhysicsOrganic chemistryAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices